Scaling opportunities for Gate-All-Around and beyond: A patterning perspective

Indira Seshadri; Eric Miller; Jennifer Church; J. Zhang; Andrew Greene; Julien Frougier; Tao Li; Yasiel Cabrera; Martin Burkhardt; Spyridon Skordas; Luciana Meli; Nelson Felix

IEDM 2023

Invited talk

09 Dec 2023

Scaling opportunities for Gate-All-Around and beyond: A patterning perspective

Abstract

Here, we review how EUV (extreme ultraviolet) lithography especially in the front end of line simplifies gate all around fabrication. We discuss avenues to the further scaling of GAA - High Numerical Aperture (NA=0.55) EUV and chiplet integration.

Invited talk

My path to AVS Fellow: Non-volatile Memory processing from fundamental understanding to the promise of atomic layer etching and sustainable etch precursors

Eric A. Joseph

AVS 2023

Invited talk

Reversing a decades-long scaling law of dielectric breakdown for ReRAM forming voltage reduction - Modeling competition among defect generation and annihilation processes

Ernest Y Wu, Takashi Ando, et al.

IEDM 2023

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Irem Boybat-Kara

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Abstract

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My path to AVS Fellow: Non-volatile Memory processing from fundamental understanding to the promise of atomic layer etching and sustainable etch precursors

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