Dopant diffusion in silicides: Effect of diffusion paths
Carol Stanis, J.M. Cotte, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The behaviors of metallic bilayers, chromium-molybdenum and chromium-tungsten, on (100) silicon during isochronal annealing have been studied by Rutherford backscattering of 2.3-MeV 4He+ ions and x-ray diffraction. These experiments were conducted with the aim of obtaining information about the respective mobilities of silicon and metal atoms in the different silicides through a comparison of the temperatures at which the silicides form and those at which they mix (through metal-atom diffusion). The results confirm that the respective silicides form via silicon-atom motion and that the mobilities of the metal atoms are markedly smaller than that of the silicon atoms.
Carol Stanis, J.M. Cotte, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
F.M. D'Heurle, I. Ames
Applied Physics Letters
F.M. D'Heurle, S. Petersson, et al.
Journal of Applied Physics
P.-E. Hellberg, S.-L. Zhang, et al.
Journal of Applied Physics