Interfaces in silicides
F.M. D'Heurle
J. Phys. IV
Solid solutions of CoSi2 and NiSi2 were prepared from the solid-state reaction of thin films of Ni-Co alloys with their silicon substrates. The room-temperature resistivity of these silicide solid solutions does not increase parabolically, but (within the sensitivity of the measurements) varies linearly with composition. A model is proposed which explains the very weak alloy scattering on the basis that in these disilicides (a) the d bands are pushed below the Fermi level, (b) conduction occurs mostly via s electrons, and (c) there is no s-d scattering.
F.M. D'Heurle
J. Phys. IV
F.M. Ross, J. Tersoff, et al.
Microscopy Research and Technique
F. Jahnel, J.P. Biersack, et al.
Journal of Applied Physics
S.-L. Zhang, F.M. D'Heurle
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties