J.R. Lloyd
Microelectronics Reliability
The relationship between interfacial adhesion and electromigration in Cu metallization was discussed. The electromigration drift velocity and lifetime in a conventional electromigration was also derived. The results indicated a linear relationship between the electromigration activation energy and the intrinsic work of adhesion.
J.R. Lloyd
Microelectronics Reliability
C.-K. Hu, L. Gignac, et al.
Journal of Applied Physics
Albert T. Wu, K.N. Tu, et al.
Applied Physics Letters
J.R. Lloyd, M.W. Lane, et al.
IIRW 2002