X.-H. Liu, M.W. Lane, et al.
Int. J. Solids Struct.
Paper
Relationship between interfacial adhesion and electromigration in Cu metallization
Abstract
The relationship between interfacial adhesion and electromigration in Cu metallization was discussed. The electromigration drift velocity and lifetime in a conventional electromigration was also derived. The results indicated a linear relationship between the electromigration activation energy and the intrinsic work of adhesion.
Related
J.R. Lloyd, E. Liniger, et al.
Microelectronics Reliability
J.R. Lloyd, E. Liniger, et al.
Journal of Applied Physics
Conference paper
Lower-k SiCOH integration for 65 nm ground rules
T. Nogami, S. Lane, et al.
VMIC 2005