P.G. Ganesan, G. Cui, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The relationship between interfacial adhesion and electromigration in Cu metallization was discussed. The electromigration drift velocity and lifetime in a conventional electromigration was also derived. The results indicated a linear relationship between the electromigration activation energy and the intrinsic work of adhesion.
P.G. Ganesan, G. Cui, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
V. McGahay, G. Bonilla, et al.
IITC 2006
I.C. Noyan, J.L. Jordan-Sweet, et al.
Applied Physics Letters
T. Nogami, S. Lane, et al.
Optics East 2005