A. Bette, J.K. DeBrosse, et al.
VLSI Circuits 2003
Ratioed CMOS gates implemented in a partially-depleted (PD) SOI CMOS technology are usually considered to be high power but will end up being both faster and lower power than other circuit implementations mainly due to the reduced junction capacitance in SOI devices as well as floating-body effects. As an example, a high performance multiplier shifter is 3 to 4 times faster and dissipates 9 times less power than more conventional implementations.
A. Bette, J.K. DeBrosse, et al.
VLSI Circuits 2003
R. Scheuerlein, W.J. Gallagher, et al.
ISSCC 2000
Christophe R. Tretz, C.T. Chuang, et al.
IEEE International SOI Conference 1998
H.B. Bakoglu, G.F. Grohoski, et al.
ICCD 1989