Gerald Burns, E.A. Giess, et al.
IEEE JQE
Paper
Radiative lifetime in GaAs1-xPx p-n junctions
Abstract
The radiative lifetime in GaAs1-xPx light-emitting diodes is observed to increase from 2 to 11 nsec with increasing injection level. A related increase in quantum efficiency is also observed. These observations are explained by using a trap-filling model, where the traps arise from defects in the epitaxially grown GaAs1-xPx. © 1973 American Institute of Physics.
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