J.A. Van Vechten, J.M. Blum, et al.
IEEE T-ED
Paper
Effect of doping on degradation of GaAsSingle Bond signAlx Ga1-xAs injection lasers
Abstract
The influence of the active layer dopant on the degradation of GaAsSingle Bond signAlx Ga1-xAs double-heterostructure lasers has been studied using pulsed excitation. Compensated p -type dopants give the slowest degradation, while n -type dopants give the most rapid. These results can be understood on the basis of arsenic vacancy migration and the formation of arsenic vacancy-acceptor complexes. © 1974 American Institute of Physics.
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