Effect of doping on degradation of GaAsSingle Bond signAl_x Ga_1-xAs injection lasers

The influence of the active layer dopant on the degradation of GaAsSingle Bond signAlx Ga1-xAs double-heterostructure lasers has been studied using pulsed excitation. Compensated p -type dopants give the slowest degradation, while n -type dopants give the most rapid. These results can be understood on the basis of arsenic vacancy migration and the formation of arsenic vacancy-acceptor complexes. © 1974 American Institute of Physics.