A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
It is shown that multiply connected perimeter contacts of a two-dimenisonal system in the quantized-Hall-effect (QHE) regime have two-terminal resistance values equal to a well-defined rational fraction of he2, depending on the interconnection configurations. A phenomenological model is presented to account for the results which is consistent with quantized dissipation in the vicinity of current-carrying contacts. It is further demonstrated that the interior of the system is dissipationless and the effect is not affected by the inclusion of macroscopic inhomogeneities. © 1984 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Michiel Sprik
Journal of Physics Condensed Matter
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
K.N. Tu
Materials Science and Engineering: A