Probing surface and bulk chemistry in resist films using near edge x-ray absorption fine structure

The utility of near-edge x-ray absorption fine structure (NEXAFS) for providing detailed chemical information about lithographic interfaces, by focusing initially on the T-topping/closure issue and probing the surface and bulk composition of the photo-acid generator in a model resist formulation was demonstrated. In addition, the extent of deprotection at the resist surface was also studied as a function of postexposure bake time using NEXAFS. The resultant data were analyzed in detail.