On the long-range order in AlGaAs

W.I. Wang

doi:10.1063/1.335805

Journal of Applied Physics

Paper

01 Jan 1985

On the long-range order in AlGaAs

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Abstract

A charge transfer dipole stabilization model is proposed to explain the recently observed long-range order in AlGaAs alloys. The connection between the large valence band offset of AlAs/GaAs and AlGaAs alloy ordering is pointed out.

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Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy

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Abstract

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Electron velocity and negative differential mobility in AlGaAs/GaAs modulation-doped heterostructures

Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures

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