T.N. Jackson, S. Nelson, et al.
IEEE Transactions on Electron Devices
Paper
Observation of the fractional quantum Hall effect in Si/SiGe heterostructures
Abstract
We have observed the fractional quantum Hall effect in the magnetotransport properties of a two-dimensional electron gas in an n-type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.
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