M. McManus, J.A. Kash, et al.
Microelectronics Reliability
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
M. McManus, J.A. Kash, et al.
Microelectronics Reliability
S. Yokoyama, D.W. Dong, et al.
Journal of Applied Physics
J.C. Tsang, Ph. Avouris, et al.
The Journal of Chemical Physics
J.E. Smith Jr., J.C. Tsang, et al.
Solid State Communications