J.C. Tsang, Y. Yokota, et al.
Applied Physics Letters
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
J.C. Tsang, Y. Yokota, et al.
Applied Physics Letters
M. Horn-Von Hoegen, M. Copel, et al.
Physical Review B
Amiram Ron, D.J. Dimaria
Physical Review B
A. Hartstein, J.R. Kirtley, et al.
Physical Review Letters