Thomas R. Puzak, A. Hartstein, et al.
Journal of Instruction-Level Parallelism
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
Thomas R. Puzak, A. Hartstein, et al.
Journal of Instruction-Level Parallelism
P.N. Sanda, J.M. Warlaumont, et al.
Physical Review Letters
J.C. Tsang
Technology in Society
D.A. Buchanan, M.V. Fischetti, et al.
Physical Review B