J.A. Kash, J.C. Tsang, et al.
IEEE Journal of Solid-State Circuits
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
J.A. Kash, J.C. Tsang, et al.
IEEE Journal of Solid-State Circuits
D.A. Buchanan, A.D. Marwick, et al.
Journal of Applied Physics
A. Hartstein, D.R. Young
Applied Physics Letters
E. Cartier, J.C. Tsang, et al.
Microelectronic Engineering