D.R. Greenberg, S. Sweeney, et al.
Technical Digest - International Electron Devices Meeting
Paper
Multilevel monolithic inductors in silicon technology
Abstract
Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps. © 1995, IEE. All rights reserved.
Related
Conference paper
RF perspective of sub-tenth-micron CMOS
C. Wann, L. Su, et al.
ISSCC 1998
D. Ahlgren, M.M. Gilbert, et al.
Canadian Journal of Physics
Conference paper
A high performance epitaxial SiGe-base ECL BiCMOS technology
D.L. Harame, E.F. Crabbe, et al.
IEDM 1992