Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Molecular beam techniques have been used to probe the dynamics of trapping for a number of systems over a range of conditions. Specifically, we have determined the trapping probability in the limit of low coverage ξ0as a function of kinetic energy Eiand angle of incidence, θifor the adsorption of Ar and Xe on Pt( 111), of Ar on 2H-W(100) and of N2on W(100) and ethane on Ir(110)-(lx2).We find in all cases that ξ0approaches unity as Eitends to zero, falling at higher energies at a rate that depends on the function Eicosnθi. Values of n are found to range from 0 for the N2/W(100) system at 300 K, to 1.6 for Xe/Pt( 111) at 85 K. We have also determined the effect of surface temperature Txfor the case of Ar on Pt (111), and find that n tends to a value of 2 (corresponding to a dependence only on motion along the surface normal), as Tsdecreases to zero. © 1990, American Vacuum Society. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Imran Nasim, Melanie Weber
SCML 2024
Mark W. Dowley
Solid State Communications
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997