Modeling of heterojunction HgCdTe photodiodes using approximate k · p approach

In this paper, we describe a new approach to simulation of HgCdTe devices based on an approximation for the k·p model. We use an approximate expression for the carrier density which includes effects of carrier degeneracy and conduction band nonparabolicity. These effects are essential for accurate modeling of HgCdTe devices. The simplicity of this approximation allows us to use well-established methods of semiconductor device modeling. On the other hand, the new approach demonstrates similar accuracy to more complex models based on numerical evaluation of the nonparabolic Fermi-Dirac integral. The new model is applied to energy band calculation of HgCdTe heterojunctions and dark current calculation of HgCdTe photodiodes.