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Conference paperBody voltage and history effect sensitivity to key device parameters in 90nm PD-SOIS. Kawanaka, M.B. Ketchen, et al.IEEE International SOI Conference 2004
PaperDistribution of magnetic flux in high-Tc grain-boundary junctions enclosing hexagonal and triangular areasJ.R. Kirtley, P. Chaudhari, et al.Physical Review B
Conference paperAggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyondD. Fried, J. Hergenrother, et al.IEDM 2004
