PaperLandau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructuresF. Fang, T.P. Smith III, et al.Surface Science
PaperSpectral response of photocurrents in the MOST and the dependence on gate and substrate biasH.C. Card, F. FangJournal of Applied Physics
PaperStress-relieved regrowth of silicon on sapphire by laser annealingG.A. Sai-Halasz, F. Fang, et al.Applied Physics Letters
