J.Z. Sun, T.S. Kuan, et al.
SPIE IOPTO 2004
We report the first observation of long-range order in a semiconductor III-V ternary alloy. AlxGa1-xAs thin crystals grown by metal-organic chemical vapor deposition or molecular-beam epitaxy have Ga atoms preferentially occupying the 0,0,0 and 0 sites and Al atoms the ,0, and 0 sites in each unit cell. Our results indicate that this ordered structure is the equilibrium state of AlxGa1-xAs. © 1985 The American Physical Society.
J.Z. Sun, T.S. Kuan, et al.
SPIE IOPTO 2004
L.C. Wang, B. Zhang, et al.
Journal of Materials Research
Harry K. Moffat, T.F. Kuech, et al.
Journal of Crystal Growth
G.D. Gilliland, D.J. Wolford, et al.
Physical Review B