Conference paper
Inversion channel mobility in high-κ high performance MOSFETs
Z. Ren, M.V. Fischetti, et al.
IEDM 2003
The bias dependence of interfacial barriers in Al2O3-based metal-oxide-semiconductor structures was studied by ballistic electron emission spectroscopy. Strong image force reductions of the barriers were observed. A conduction band offset between Al2O3 and Si of 2.78 eV was obtained. Electron trapping into levels that overlap the Si band gap and are located near the Si-Al2O3 interface led to charge densities of ∼2.5 × 1012cm-2. © 2000 American Institute of Physics.
Z. Ren, M.V. Fischetti, et al.
IEDM 2003
Catherine Dubourdieu, E. Cartier, et al.
Applied Physics Letters
A. Kerber, E. Cartier, et al.
INFOS 2003
J.M. Atkin, E. Cartier, et al.
Applied Physics Letters