Martin M. Frank, Cyril Cabral, et al.
IEEE Electron Device Letters
We have used scanning microdiffraction topography to determine the mismatch strains and local strain distributions in silicon-on-insulator substrates with overlying thin film stressor features. Analysis of the data using the edge-force model and the Ewald-von Laue dynamical diffraction theory shows the presence of an exponential strain gradient in the vicinity of the buried SiO2 /Si -substrate interface. We show that, for simple geometries, it is possible to deduce the sign of the mismatch strain simply by inspecting the microdiffraction topograph. © 2008 American Institute of Physics.
Martin M. Frank, Cyril Cabral, et al.
IEEE Electron Device Letters
Sean M. Polvino, Conal E. Murray, et al.
Applied Physics Letters
Judson R. Holt, Anita Madan, et al.
Journal of Applied Physics
L.S. Schadler, I.C. Noyan
Journal of Materials Science Letters