Lateral down-scaling of selective area MOVPE-grown GaInAs/InP wires and dots

In situ buried GaInAs/InP wires and dots are fabricated by low-pressure MOVPE on patterned masked InP substrates. Under optimized growth conditions, GaInAs structures with controlled lateral dimensions down to 35 nm can be obtained starting from relatively non-critical 0.25 μm mask patterns and by exploiting lateral reduction growth effects. Below these dimensions, precise control over the GaInAs structures becomes difficult due to growth irregularities. Low-temperature photoluminescence spectra on wires of various dimensions show effects associated with growth rate and stoichiometry variations as well as the appearance of side wall quantum well growth. © 1993.