R.B. Laibowitz, L. Esaki, et al.
Physics Letters A
Josephson tunnel junctions have been fabricated incorporporating a thin layer of normal metal which is oxidized to form the tunnel barrier. The tunnel devices tested were of the form Nb/Al/Al2O3/Nb and several milliamperes of Josephson current were observed at 4.2°K. These samples have been found to have better defined tunneling characteristics than samples of the form Nb/NbOx/Nb. © 1972 The American Institute of Physics.
R.B. Laibowitz, L. Esaki, et al.
Physics Letters A
S. Washburn, C.P. Umbach, et al.
Physical Review B
R.B. Laibowitz, J.Z. Sun, et al.
IEEE TAS
R.P. Robertazzi, A.W. Kleinsasser, et al.
Physical Review B