Conference paperBand edge high-K /metal gate n-MOSFETs using ultra thin capping layersV.K. Paruchuri, V. Narayanan, et al.VLSI-TSA 2007
PaperSubmicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar TransistorsT.C. Chen, E. Ganin, et al.IEEE T-ED
PaperMethodology for Bipolar Process Diagnosis and Its Application to Advanced Self-Aligned Bipolar TransistorsG.P. Li, E. Hackbarth, et al.IEEE T-ED
Conference paperControlling floating-body effects for 0.13μm and 0.10μm SOI CMOSS.K.H. Fung, N. Zamdmer, et al.IEDM 2000