ReviewComment on Electronic structure of ideal metal/GaAs contactsJ. Freeouf, J. Woodall, et al.Physical Review Letters
PaperAsymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayersK.L. Kavanagh, M.A. Capano, et al.Journal of Applied Physics
PaperIn situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfacesX. Yin, H.-M. Chen, et al.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperImproved contacts to semi-insulating GaAs photoconductive switches using a graded layer of InGaAsD. Kuchta, J.R. Whinnery, et al.Applied Physics Letters
