PaperTemperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxyC.R. Lu, J.R. Anderson, et al.Physical Review B
PaperResonant indirect Fowler-Nordheim tunneling in Al0.8Ga 0.2As barrierS.S. Lu, K. Lee, et al.Applied Physics Letters
Conference paperSELF-ALIGNED PROCESSES FOR THE GaAs GATE FET.H. Baratte, D.C. La Tulipe, et al.IEDM 1985