PaperLattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxyT.J. De Lyon, J. Woodall, et al.Applied Physics Letters
Conference paperA-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor depositionS.L. Wright, M.B. Rothwell, et al.Device Research Conference 1993
PaperTechnique for producing "good" GaAs solar cells using poor-quality substratesH.J. Hovel, J. WoodallApplied Physics Letters