Paper

01 Jan 1983

IVA-7 A New High Purity Si Doping Source for MBE Grown GaAs Devices

View publication

Abstract

No abstract available.

Paper

Doping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga_0.51In_0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy

T.J. De Lyon, J. Woodall, et al.

Applied Physics Letters

Paper

Contactless electromodulation for in situ characterization of semiconductor processing

X. Yin, X. Guo, et al.

Applied Surface Science

Paper

Absence of Fermi level pinning at metal-In_xGa₁_-xAs(100) interfaces

L.J. Brillson, M.L. Slade, et al.

Applied Physics Letters

Paper

Photon recycling in semiconductor lasers

Frank Stern, J. Woodall

Journal of Applied Physics

View all publications