J.N. Burghartz, M. Soyuer, et al.
ESSDERC 1995
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of diameter as small as 1 p.m onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system, and its operation, are described. Applications are described which demonstrate the capabilities of the system. © 1993 IEEE
J.N. Burghartz, M. Soyuer, et al.
ESSDERC 1995
G. Almasi, G. Almasi, et al.
Digest of Technical Papers - IEEE International Solid-State Circuits Conference
G. Shahidi, J. Warnock, et al.
VLSI Technology 1992
G. Shahidi, J. Warnock, et al.
VLSI Technology 1993