Keith A. Jenkins, K. Rim
IEEE Electron Device Letters
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of diameter as small as 1 p.m onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system, and its operation, are described. Applications are described which demonstrate the capabilities of the system. © 1993 IEEE
Keith A. Jenkins, K. Rim
IEEE Electron Device Letters
J.N. Burghartz, J.D. Cressler, et al.
ESSDERC 1991
Joel Silberman, Naoaki Aoki, et al.
IEEE Journal of Solid-State Circuits
W.H. Henkels, N.C.-C. Lu, et al.
VLSI Circuits 1989