Interface modifications for improving the adhesion of a-c:H films to metals

The adhesion of diamondlike hard carbon films to silicide forming metals was improved by using an interfacial silicon film several atomic layers thick. The use of thicker (> 10 nm) silicon layers results in a decrease in the adhesion, probably due to a degradation of the structural integrity by excessive silicide formation. © 1988, Materials Research Society. All rights reserved.