Inelastic light scattering studies of chemical vapor deposition systems

Raman and resonance fluorescence spectra, determined by inelastic light scattering measurements, can be used to probe a gas phase chemical reaction in situ during the reaction. The data can be interpreted to identify the molecular species in the reaction and to determine molecular concentrations and temperatures as well as their profiles. In this paper first a brief review of the technique and necessary apparatus for its implementation is given. Then studies of W and epitaxial Si chemical vapor deposition systems are described. In the Si deposition system, the production of an intermediate product SiCl2 by a gas phase homogeneous reaction is observed for the first time. In the W deposition system, the profiles of input gas (WF6) partial pressure are presented and correlated with film growth rates. © 1977.