Conference paper
Studies of EELS L2,3 absorption fine structure in thin silicon
P.E. Batson
Microscopy of Semiconducting Materials 1991
We have introduced a modest power (50 mW) laser beam into a high resolution scanning transmission electron microscope in order to heat samples to high temperatures and cool them rapidly enough to]] freeze in" the effects of the high temperature. Sequential micrographs of the sample taken after 0.1-s heating pulses show, for example, material migration, grain growth, and crystallization of amorphous silicon evaporated on to 50-nm Si3N4 substrates.
P.E. Batson
Microscopy of Semiconducting Materials 1991
P.E. Batson, G. Trafas
Ultramicroscopy
V. Narayanan, V.K. Paruchuri, et al.
VLSI Technology 2006
R.T. Hodgson, V.R. Deline, et al.
MRS Proceedings 1983