Conference paper
Studies of EELS L2,3 absorption fine structure in thin silicon
P.E. Batson
Microscopy of Semiconducting Materials 1991
We have introduced a modest power (50 mW) laser beam into a high resolution scanning transmission electron microscope in order to heat samples to high temperatures and cool them rapidly enough to]] freeze in" the effects of the high temperature. Sequential micrographs of the sample taken after 0.1-s heating pulses show, for example, material migration, grain growth, and crystallization of amorphous silicon evaporated on to 50-nm Si3N4 substrates.
P.E. Batson
Microscopy of Semiconducting Materials 1991
C.F. Dewey, W.R. Cook, et al.
IEEE JQE
P.E. Batson
Ultramicroscopy
P.E. Batson, T.M. Shaw, et al.
Physical Review B