PaperSilicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam EpitaxyGary L. Patton, Subramanian S. Iyer, et al.IEEE Electron Device Letters
Conference paperTunnel Current Measurements on P/N Junction Diodes and Implications for Future Device DesignPaul M. Solomon, David J. Frank, et al.IEDM 2003
PaperThreshold and Sheet Concentration Sensitivity of High Electron Mobility TransistorsSandip TiwariIEEE T-ED
PaperIVA-3 Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar TransistorsSandip Tiwari, David J. Frank, et al.IEEE T-ED
