D.J. Dimaria, D. Arnold, et al.
Applied Physics Letters
Paper
Hot electron emission lithography
Abstract
We have developed an electron lithography method, hot electron emission lithography, which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design and fabrication of the patterned electron emitting mask made by standard metal-oxide-semiconductor technology will be discussed, and its applicability in a simple 1:1 e-beam stepper will be demonstrated. Patterns with a minimum feature size of 160 nm have been printed successfully. Further improvements in resolution to 50 nm appear to be possible. © 1998 American Institute of Physics.
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