William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Paper
Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface
Abstract
Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO2-interface during high-field current stress using a hot-electron-induced hydrogen-release model. © 1993.
Related
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Robert W. Keyes
Physical Review B
J. Tersoff
Applied Surface Science