Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
A simple u.v. curing process is described that renders micron sized images in AZ resists resistant to flow when heated to temperatures as high as 210° C. The u.v. treatment prevents the image flow problems usually encountered in reactive ion etching processes. © 1981, The Electrochemical Society, Inc. All rights reserved.
T.N. Morgan
Semiconductor Science and Technology
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Peter J. Price
Surface Science