A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
A simple u.v. curing process is described that renders micron sized images in AZ resists resistant to flow when heated to temperatures as high as 210° C. The u.v. treatment prevents the image flow problems usually encountered in reactive ion etching processes. © 1981, The Electrochemical Society, Inc. All rights reserved.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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JES
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Surface Science
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