Enabling Next Generation CMOS by Novel EOT Scaling Module
Lin Dong, Steven Hung, et al.
VLSI Technology 2021
We present a 256×256 in-memory compute (IMC) core designed and fabricated in 14nm CMOS with backend-integrated multi-level phase-change memory (PCM). It comprises 256 linearized current controlled oscillator (CCO)-based ADCs at a compact 4µm pitch and a local digital processing unit performing affine scaling and ReLU operations. A novel frequency-linearization technique for CCOs is introduced, leading to accurate on-chip matrix-vector-multiply (MVM) when operating over 1 GHz. Measured classification accuracies on MNIST and CIFAR-10 datasets are presented when two cores are employed for deep learning (DL) inference. The measured energy efficiency is 10.5 TOPS/W at a performance density of 1.59 TOPS/mm2
Lin Dong, Steven Hung, et al.
VLSI Technology 2021
Qingyun Xie, Nadim Chowdhury, et al.
VLSI Technology 2021
P. Bhosale, N. Lanzillo, et al.
VLSI Technology 2021
J. Wang, S.D. Suk, et al.
VLSI Technology 2021