Growth and strain symmetrization of Si/Ge/C/Sn quaternary alloys by molecular beam epitaxy

We have synthesized, via molecular beam epitaxy alloys of SixSnyC1-x-y with symmetric strain. In this work we report the growth of systems with varying compositions/band gaps including the first silicon-based quaternary (Si/Ge/Sn/C) system, which offers an additional degree of freedom for strain and band gap engineering in Si-based alloys. We report the growth of Si.955Sn.03C.015 alloys up to 4500 Å in thickness and quaternaries of composition in the neighborhood of Si.835Ge.125Sn.03C.01. Infrared absorption spectroscopy and photoluminescence data have provided evidence of the potential for significant band gap modification in these alloys. © 1996 American Institute of Physics.