Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Pronounced many-body exciton effects have been observed through photoluminescence in modulation-doped n-type GaAs quantum wells where a near-resonance coincidence exists between a transition involving two-dimensional electrons at the Fermi level in the first conduction subband and an exciton transition from the second conduction subband. Under these conditions, strong and distinct Fermi-edge singularities can be observed near k0. A magnetic field induces further enhancement of the effect but also leads to very large, B-1-periodic amplitude variations in the photoluminescence, with excursions over 3 orders of magnitude. © 1991 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
T. Schneider, E. Stoll
Physical Review B
Frank Stem
C R C Critical Reviews in Solid State Sciences
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry