Fabrication of ultrathin, highly uniform thin-film soi mosfet's with low series resistance using pattern-constrained epitaxy

We report a novel fabrication process for selfaligned, ultrathin, highly uniform thin-film SOI MOSFET's with low series resistance. Self-aligned, ultrathin SOI n-MOSFET's with 8 nm-50 nm undoped channel were fabricated. For nMOSFET's with a 0. 2 /urn effective channel length, a saturation transconductance of 242 mS/mm, and a low series resistance (Rs/d -333 Cl-fim) were obtained. © 1997 IEEE.