Degradation of GaAs and Ga1-xAlxAs light emitting diodes
J.M. Blum, K. Konnerth, et al.
IRPS 1970
The signal-bandwidth products of excitonic electroabsorption of low-temperature-growth (LTG) molecular beam epitaxial films of GaAs and Al0.25Ga0.75As are larger than in the related stoichiometric materials. The enhanced electro-optic properties of these composites may be caused by increased inhomogeneity of dc electric fields. The differential transmission in LTG Al0.25Ga0.75As annealed at 750°C for 30 s is relatively broadband and approaches 60% for dc electric fields of only 1.5×104 V/cm.
J.M. Blum, K. Konnerth, et al.
IRPS 1970
Alan C. Warren, N. Katzenellenbogen, et al.
Applied Physics Letters
K. Mahalingam, N. Otsuka, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
R.F. Peart, K. Weiser, et al.
Applied Physics Letters