John G. Long, Peter C. Searson, et al.
JES
Paper
Defects in amorphous hydrogenated silicon nitride films
Abstract
In this paper we review the structural identification and electronic properties of the K- and N-centers, and positive charges in as-deposited and UV-illuminated amorphous silicon nitride thin films. © 1993.
Related
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Conference paper
Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997