Defects in amorphous hydrogenated silicon nitride films

Jerzy Kanicki; W.L. Warren

doi:10.1016/0022-3093(93)91180-B

Journal of Non-Crystalline Solids

Paper

02 Dec 1993

Defects in amorphous hydrogenated silicon nitride films

View publication

Abstract

In this paper we review the structural identification and electronic properties of the K- and N-centers, and positive charges in as-deposited and UV-illuminated amorphous silicon nitride thin films. © 1993.

Paper

Surface crystallography of the c(2×2) sodium overlayer on Al(100)

B.A. Hutchins, T.N. Rhodin, et al.

Surface Science

Paper

Theory of temperature-induced Mott transitions

Ellen J. Yoffa, David Adler

Physical Review B

Paper

Ligand-stabilized copper(I) hexafluoroacetylacetonate complexes: NMR spectroscope and the nature of the copper-alkene bond

Thomas H. Baum, Carl E. Larson, et al.

Journal of Organometallic Chemistry

Paper

Electrochemical characterization of adsorption-desorption of the cuprous-suppressor-chloride complex during electrodeposition of copper

John G. Long, Peter C. Searson, et al.

JES

View all publications

Abstract

Related

Surface crystallography of the c(2×2) sodium overlayer on Al(100)

Theory of temperature-induced Mott transitions

Ligand-stabilized copper(I) hexafluoroacetylacetonate complexes: NMR spectroscope and the nature of the copper-alkene bond

Electrochemical characterization of adsorption-desorption of the cuprous-suppressor-chloride complex during electrodeposition of copper