PaperExact description and data fitting of ion-implanted dopant profile evolution during annealingR. Ghez, G.S. Oehrlein, et al.Applied Physics Letters
PaperEfficient injection electroluminescence in znte by avalanche breakdownB.L. Crowder, F.F. Morehead, et al.Applied Physics Letters
PaperInjection mechanism and recombination kinetics in electroluminescent cdte diodesF.F. MoreheadJournal of Applied Physics
PaperFormation of amorphous silicon by ion bombardment as a function of ion, temperature, and doseF.F. Morehead, B.L. Crowder, et al.Journal of Applied Physics
