PaperOn the nature of point defects and the effect of oxidation on substitutional dopant diffusion in siliconT.Y. Tan, U. Gösele, et al.Applied Physics A Solids and Surfaces
PaperInjection mechanism and recombination kinetics in electroluminescent cdte diodesF.F. MoreheadJournal of Applied Physics
PaperComment on “The diffusion of antimony in heavily doped and (sic) n- and p-type silicon” [J. Mater. Res. 1, 705 (1986)]F.F. MoreheadJournal of Materials Research
