Advanced junction formation for Sub-32nm logic devices
Sadanand V. Deshpande, Ahmet Ozcan, et al.
IWJT 2010
Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth. © 2013 AIP Publishing LLC.
Sadanand V. Deshpande, Ahmet Ozcan, et al.
IWJT 2010
Conal E. Murray, Jean Jordan-Sweet, et al.
Applied Physics Letters
Zhaohui Yang, Chi-Hang Lam, et al.
Applied Physics Letters
Simon Gaudet, Koen De Keyser, et al.
JVSTA