Yu. Ya. Divin, J. Mygind, et al.
IEEE TAS
Paper
Effects of ion implantation on the structure of amorphous germanium
Abstract
We have investigated the structure of amorphous Ge films with 10-keV Ge74 ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion-implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network.
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