Paul J. Steinhardt, P. Chaudhari
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
We have investigated the structure of amorphous Ge films with 10-keV Ge74 ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion-implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network.