Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
It has been known that silicon atoms can diffuse out through a gold film and accumulate on the top surface at low temperatures. To investigate the effect of this phenomenon on the silicide formation kinetics, a gold layer was deposited between a platinum layer and a silicon layer. After annealing, the progress of silicide formation was probed with Rutherford backscattering spectrometry. It was found that the PtSi formation rate is greatly enhanced by a gold film while the Pt2Si formation rate shows little changes. These are explained in terms of different dominant diffusing species during the formation of silicides. © 1987, American Vacuum Society. All rights reserved.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings