S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
C.-K. Hu, N.J. Mazzeo, et al.
Materials Chemistry and Physics
J.R. Lloyd, X.-H. Liu, et al.
IRPS 2009
C.-K. Hu, L. Gignac, et al.
Applied Physics Letters