L. Gignac, S. Mittal, et al.
Microscopy and Microanalysis
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
L. Gignac, S. Mittal, et al.
Microscopy and Microanalysis
C.-K. Hu, L. Gignac, et al.
Microelectronic Engineering
Eva E. Simonyi, E. Liniger, et al.
MRS Spring Meeting 2005
S. Bangsaruntip, G.M. Cohen, et al.
IEDM 2009