S. Sankaran, S. Arai, et al.
IEDM 2006
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
S. Sankaran, S. Arai, et al.
IEDM 2006
G.A. Antonelli, G. Jiang, et al.
Microelectronic Engineering
C.-K. Hu, K.Y. Lee, et al.
MRS Spring Meeting 1998
E. Liniger, T.M. Shaw, et al.
Microelectronic Engineering