H.K. Kao, G.S. Cargill III, et al.
Materials Research Society Symposium - Proceedings
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
H.K. Kao, G.S. Cargill III, et al.
Materials Research Society Symposium - Proceedings
C.-K. Hu, K.L. Lee, et al.
MRS Spring Meeting 1996
C.-K. Hu, L. Gignac, et al.
Microelectronics Reliability
A. Domenicucci, R. Filippi, et al.
Journal of Applied Physics