Conference paper
Growth of crystalline defects on the surface of FSG dielectrics
J.P. Gambino, J. Burnham, et al.
AMC 2003
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
J.P. Gambino, J. Burnham, et al.
AMC 2003
C.-K. Hu, M.B. Small, et al.
Applied Physics Letters
C.-K. Hu, M.B. Small, et al.
MRS Fall Meeting 1986
R.F. Cook, E. Liniger
Journal of Materials Science