P. Solomon
SPIE Advances in Semiconductors and Superconductors 1988
Paper
Effect of forming gas anneal on Al-SiO2 internal photoemission characteristics
Abstract
Internal photoemission characteristics from the Al-SiO2 interface are markedly affected by a 400 °C 20 min forming gas (90% N 2 and 10% H2) anneal. The barrier height is raised by about 0.25 eV and the electric field dependence of the photocurrent is increased.
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