A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The surface electronic structure of Cu on stepped and flat W(110) is determined with inverse photoemission. An intense, Cu-induced surface state is found at 0.6 eV above the Fermi level on W(110). It is located in the 1 band gap. On the stepped W(331) surface there is a similar state at 0.7 eV. This terrace state shifts down to 0.3 eV when the coverage of Cu is reduced such that only a single row of Cu atoms remains at a step edge. © 1994 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
K.N. Tu
Materials Science and Engineering: A