Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
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SPIE Advanced Lithography 2007
Direct high-resolution photoetching of various resists and polymers has been demonstrated using an ArF excimer laser at 193 nm. Features as small as 0.3 μm have been produced in 1 μm thick films with no subsequent wet processing steps necessary. © 1984 Springer-Verlag.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
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Surface Science
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