Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Paper
Direct high-resolution excimer laser photoetching
Abstract
Direct high-resolution photoetching of various resists and polymers has been demonstrated using an ArF excimer laser at 193 nm. Features as small as 0.3 μm have been produced in 1 μm thick films with no subsequent wet processing steps necessary. © 1984 Springer-Verlag.
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