Deepak C. Sekar, Bing Dang, et al.
IEEE Electron Device Letters
Paper
Device parameter optimization for reduced short channel effects in retrograde doping MOSFET
Abstract
A simple technique to optimize the device parameters of the retrograde channel doping MOSFET to minimize short channel effects for a constant threshold voltage is presented in this work. The results indicate that the highest possible substrate doping does not necessarily result in minimum short channel effects. © 1996 IEEE.
Related
Bing Dang, Muhannad S. Bakir, et al.
JMEMS
Nicky Chau-Chun Lu, Chih-Yuan Lu, et al.
IEEE T-ED
Conference paper
Circuit optimization using scale based sensitivities
Bhavna Agrawal, Frank Liu, et al.
CICC 2006