Density of &quot;amorphous&quot; Ge

T.B. Light

doi:10.1103/PhysRevLett.22.999

Physical Review Letters

Paper

12 May 1969

Density of "amorphous" Ge

View publication

Abstract

The density of vapor-deposited "amorphous" Ge was determined from x-ray-diffraction absorption measurements and found to be the same as the density of crystalline Ge within ±5%. © 1969 The American Physical Society.

Paper

Structure of thin lead oxide layers as determined by x-ray diffraction

T.B. Light, J.M. Eldridge, et al.

Journal of Applied Physics

Paper

Anomalous Thermal Behavior of Boron-Doped Low-Temperature Ge Epitaxial Layers

M. Berkenblit, T.B. Light, et al.

JES

Paper

Thermal forming of niobium oxide switchable resistors

K.C. Park, M. Berkenblit, et al.

Journal of Electronic Materials

Paper

A determination of the thermal expansion of pure Ge and a measurement of the differential thermal expansion of a GeSingle Bond signGaAs thin-layer couple

R. Feder, T.B. Light

Journal of Applied Physics

View all publications

Abstract

Related

Structure of thin lead oxide layers as determined by x-ray diffraction

Anomalous Thermal Behavior of Boron-Doped Low-Temperature Ge Epitaxial Layers

Thermal forming of niobium oxide switchable resistors

A determination of the thermal expansion of pure Ge and a measurement of the differential thermal expansion of a GeSingle Bond signGaAs thin-layer couple