Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Paper
De Haas-Van Alphen effect in silicon inversion layers
Abstract
The dHvA effect was observed in a Si inversion layer by a modulation technique for constant magnetic field up to 15 T. The expected periodic spikes in dM dn between Landau levels were discerned. However, the predicted quantum plateaus with step of h {combining short stroke overlay}e m*c are not yet observed. © 1984.
Related
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters