C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Paper
De Haas-Van Alphen effect in silicon inversion layers
Abstract
The dHvA effect was observed in a Si inversion layer by a modulation technique for constant magnetic field up to 15 T. The expected periodic spikes in dM dn between Landau levels were discerned. However, the predicted quantum plateaus with step of h {combining short stroke overlay}e m*c are not yet observed. © 1984.
Related
Eloisa Bentivegna
Big Data 2022
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992