Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
P.C. Pattnaik, D.M. Newns
Physical Review B
R. Ghez, J.S. Lew
Journal of Crystal Growth
R.W. Gammon, E. Courtens, et al.
Physical Review B