G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications