J.H. Stathis, R. Bolam, et al.
INFOS 2005
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
R. Ghez, J.S. Lew
Journal of Crystal Growth
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering