J.H. Stathis, R. Bolam, et al.
INFOS 2005
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
P. Alnot, D.J. Auerbach, et al.
Surface Science