Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
David B. Mitzi
Journal of Materials Chemistry
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
J.A. Barker, D. Henderson, et al.
Molecular Physics